Design of an Adiabatic FinFET Circuit Operating In Medium Strong Inversion Region

نویسندگان

  • S. Priyanka
  • P. Deepa
  • V. M. Senthil Kumar
چکیده

Scaling of device technology, the leakage power has become the main part of power consumption, which seriously reduces the energy recovery efficiency of adiabatic logic.CMOS devices are shrinking to nanometer regime, increasing the consequences in short channel effects and variations in the process parameters which lead to cause the reliability of the circu it as well as performance. To solve these issues of CMOS, CMOS (Complementary metal oxide semiconductor) FinFET (Fin-type Field-Effect Transistors) is one of the promising and better technologies without sacrificing reliability and performance for its applications and the circuit design. To minimize short channel effects, FinFET is used. Lowering supply voltage of FinFET circuits is an effective way to achieve low power dissipations. The super-threshold adiabatic FinFET circuits based on PAL-2N operating on medium strong inversion regions are addressed in terms of energy consumption and operating frequency. In this paper, we use 32nm predictive Technology model. The super-threshold adiabatic FinFET log ic circuits can attain low energy consumption with favorable performance, since FinFET devices can provide better drive strength than bulk CMOS ones.

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تاریخ انتشار 2015